ICeGaN® Combo – Performance Boost And Cost Reduction For EV Traction Inverters

Cambridge GaN Devices’ CTO Professor Florin Udrea presented a groundbreaking innovation for the first time at the International Electron Devices Meeting (IEDM) in San Francisco, USA on December 11. During the talk, Prof. Udrea introduced the revolutionary ICeGaN® Combo concept — a parallel integration of an intelligent GaN HEMT (ICeGaN®) and an IGBT. This innovative solution is designed to tackle a key challenge faced by many applications, such as EV traction inverters: poor light-load efficiency.

More details were exposed in the paper, explaining why ICeGaN® Combo is a game-changer:

• Breaking Barriers for GaN: While GaN HEMTs are celebrated for their high switching frequency and efficiency, they’ve often been confined to low-power applications. The ICeGaN® Combo unlocks GaN’s potential for high-power use cases.

• Enhanced light-load efficiency for EV Inverters: With unparalleled light-load efficiency and robust high-power performance, this innovative ICeGaN® Combo switch is a good perfect fit for electric vehicle (EV) inverters, where light-load operation dominates > 85% of its uses.

• The Best of Both Worlds: The ICeGaN® excels in light-load, low-temperature operation with smart integrated features, while the IGBT shines in high-power, high-temperature conditions, including offering avalanche capability.

• A Viable Alternative to SiC: Providing a superior balance of efficiency, cost, and robustness, the ICeGaN® Combo is a viable alternative to SiC or hybrid SiC and IGBT solutions in the growing market for high-efficiency EV inverters.

Be among the first to learn how the ICeGaN® Combo is pushing the boundaries of GaN technology and reshaping the future of power electronics.