Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, will take the opportunity afforded by PCIM, Europe’s leading power electronics exhibition and conference (Nuremberg Messe, 11-13th June) to demonstrate how the company’s product portfolio is developing to address higher power applications such as motor drives, inverters and data centres, as well as lower power, ultra-compact smart portable device adapters and chargers.

As well as introducing a new product family, and showing a selection of informative demos on its booth (Hall 7 stand 643), CGD will have a very visible presence around the show with various presentations.

Andrea Bricconi, Chief Commercial Officer, CGD “With its inherent ruggedness and reliability, our ICeGaN™ GaN ICs are perfectly suited to meet the needs of higher power applications such as data centres and inverters. Our presentations and demos and the new devices which we are launching at the show will illustrate our capabilities for these markets.

CGD’s Booth (Hall 7 643) will feature reference designs, evaluation boards and demos that support the company’s existing business in chargers and adapters as well as the new higher power applications. New exhibits include:

  • Very high power density (30W/in3) 140W reference design produced with the Taiwanese Industrial Technology Research Institute (ITRI) board
  • Single leg of a 3-phase automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles
  • Two half-bridge evaluation boards with new thermally-enhanced DFN package designs
  • A 2.7kW totem-pole power factor correction demo board
  • Qorvo motor drive evaluation kit using ICeGaN
  • Demo comparing a half-bridge circuit realized using ICeGaN vs discrete e-Mode GaN

“The power electronics world has swung irrevocably in favour of GaN. Visit CGD during PCIM to experience the world’s easiest-to-use GaN, so your application can benefit from GaN’s greater efficiency and higher power density now, without any design delays.”